〇Tetsuro Anekawa¹, Chaoliang Zhang¹, Shunsuke Fukami^2,3, Hideo Ohno^1,2,3,4 (1.RIEC Tohoku univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

〇Shunsuke Fukami^1,2, Chaoliang Zhang³, Samik DuttaGupta³, Hideo Ohno^1,2,3,4 (1.CSIS, Tohoku Univ., 2.CIES, Tohoku Univ., 3.RIEC, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

〇(D)Chaoliang Zhang¹, Shunsuke Fukami^2,3, Hideo Sato^2,3, Fumihiro Matsukura^1,2,4, Hideo Ohno^1,2,3,4 (1.RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

〇Tomohiro Taniguchi¹, Julie Grollier², Mark Stiles³ (1.SRC, AIST, 2.CNRS/Thales, 3.NIST)

〇Yota Takamura¹, Shigeki Nakagawa¹, Satoshi Sugahara² (1.Dept. of Physical Electron., Tokyo Tech, 2.ISEL, Tokyo Tech)

〇(M2)Ryo Ohshima¹, Yuichiro Ando², Teruya Shinjo², Kosuke Matsuzaki³, Tomofumi Susaki³, Masashi Shiraishi² (1.Osaka Univ., 2.Kyoto Univ., 3.MSL, Tokyo Tech.)

〇Hiromu Gamou¹, Jeongchun Ryu¹, Shoichi Takasuna¹, Kohei Yoshizumi¹, Makoto Kohda¹, Junsaku Nitta¹ (1.Tohoku Univ.)

〇(M2)穴見 陵¹、ラナ ビヴァス²、近藤 浩太²、山田 将貴³、三浦 勝哉³、小川 晋³、大谷 義近^2,4、福間 康裕^1,2 (1.九工大情報工、2.理研CEMS、3.日立中央研、4.東大物性研)

〇三澤 貴浩¹、森 澄人¹、笠 晴也¹、中村 晃輔²、海住 英生¹、西井 準治¹ (1.北大電子研、2.北大理)

〇Akihiro Kirihara^1,2, Masahiko Ishida^1,2, Kazuki Ihara^1,2, Yuma Iwasaki¹, Hiroko Someya^1,2, Ryota Yuge¹, Ken-ichi Uchida^3,4, Eiji Saitoh^2,3,5,6, Shinichi Yorozu^1,2 (1.NEC, 2.JST-ERATO, 3.IMR, Tohoku Univ., 4.JST-PRESTO, 5.AIMR, Tohoku Univ., 6.JAEA)

〇Rafael Ramos^1,2,3, Takashi Kikkawa⁴, Myriam H. Aguirre^1,5,6, Irene Lucas^1,7, Alberto Anadon^1,5, Takafumi Oyake⁸, Ken-ichi Uchida^4,9, Hiroto Adachi^3,10, Junichiro Shiomi⁸, Pedro A. Algarabel^5,11, Luis Morellon^1,5, Sadamichi Maekawa^3,10, Eiji Saitoh^2,3,4,10, M. Ricardo Ibarra^1,5,6 (1.INA, Univ. of Zaragoza, 2.WPI-AIMR, Tohoku Univ., 3.ERATO-SQR, 4.IMR, Tohoku Univ., 5.Dep. Phys. Cond. Matter, Univ. of Zaragoza, 6.Lab. Adv. Microsc., Univ. of Zaragoza, 7.ARAID, 8.Univ. of Tokyo, 9.PRESTO, 10.JAEA, 11.ICMA, CSIC-Univ. of Zaragoza)