Krzysztof Tyszka^1,2, 〇Daniel Moraru³, Arup Samanta¹, Takeshi Mizuno¹, Ryszard Jablonski², Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.Warsaw Univ. Tech., 3.Shizuoka Univ.)

09:30 〜 09:45

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

Cyril Sadia¹, 〇(D)Elmer Estacio¹ (1.National Institute of Physics, University of the Philippines Diliman)

09:45 〜 10:00

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs

〇(PC)Samanta Arup¹, Moraru Daniel², Yuki Takasu¹, Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ, 2.Faculty Eng, Shizuoka Univ)

セッション一覧

13 半導体 » 13.6 Semiconductor English Session

[15a-PB5-1~4] 13.6 Semiconductor English Session

▼ [15a-PB5-1] Thermally Efficient Electron Spin Injection in InGaAs Quantum Well and Quantum Dot Tunnel-Coupled Nanostructures

▲ [15a-PB5-2] Si(100) crystal grains formation by Double-line Beam Continuous-Wave Laser Crystallization with Overlapping

▲ [15a-PB5-3] Externally applied magnetic field-effects on the terahertz emission
from p-type and n-type InAs wafers

▲ [15a-PB5-4] Terahertz wave detection in metal GaAs metal structures using Cherenkov phase matched electro-optic sampling

[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs

認証

セッション一覧

13 半導体 » 13.6 Semiconductor English Session

[15a-PB5-1~4] 13.6 Semiconductor English Session

▼ [15a-PB5-1] Thermally Efficient Electron Spin Injection in InGaAs Quantum Well and Quantum Dot Tunnel-Coupled Nanostructures

▲ [15a-PB5-2] Si(100) crystal grains formation by Double-line Beam Continuous-Wave Laser Crystallization with Overlapping

▲ [15a-PB5-3] Externally applied magnetic field-effects on the terahertz emissionfrom p-type and n-type InAs wafers

▲ [15a-PB5-4] Terahertz wave detection in metal GaAs metal structures using Cherenkov phase matched electro-optic sampling

[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-clusterin narrow channel SOI-FETs

認証

▲ [15a-PB5-3] Externally applied magnetic field-effects on the terahertz emission
from p-type and n-type InAs wafers

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs