[13a-2S-1~8] 3.15 Silicon photonics

[13a-2S-5] Proposal of photonic integrated circuits on III-V on SiC wafer

〇Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Univ. Tokyo, 2.JST-CREST)

Keywords:photonic integrated circuits,III-V semiconductor,SiC

We have proposed a novel platform for photonic integrated circuits on a III-V on SiC wafer. Since SiC has large thermal conductivity, III-V waveguides with an SiC clad enable III-V-based photonic integrated circuits with high-density active devices. By using 3D FDTD, we have numerical analyzed a bend loss of III-V on Si waveguides. It is found that an InGaAsP photonic-wire waveguide exhibit a negligible bend loss when the bend radius is larger than 7 μm. The temperature distribution is also analyzed with varied injection power into the waveguide core. When an InGaAsP rib waveguide is on an SiC wafer, the temperature increase of the waveguide core can be suppressed by 1/30. Thus, the III-V on SiC wafer enables high-density photonic integrated circuits.