The 76th JSAP Autumn Meeting, 2015

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[13a-4C-1~12] 13.3 Insulator technology

Sun. Sep 13, 2015 9:00 AM - 12:15 PM 4C (432)

座長:渡邉 孝信(早大),右田 真司(産総研)

10:00 AM - 10:15 AM

[13a-4C-5] Substrate temperature dependence of ALD alumina film using oxygen plasma

〇(M1)Yoshihiko Izumi1, Ryo Fukui1, Yoshinori Nakamura1, Hitoshi Wakabayashi1, Kazuo Tsutsui1, Hiroshi Iwai1, Kuniyuki Kakushima1 (1.Tokyo Tech. IGSSE)

Keywords:dipole,alumina