The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[13a-4C-1~12] 13.3 Insulator technology

Sun. Sep 13, 2015 9:00 AM - 12:15 PM 4C (432)

座長:渡邉 孝信(早大),右田 真司(産総研)

10:15 AM - 10:30 AM

[13a-4C-6] An insulator-charging/dipole model of electric conduction through ALD-Al2O3 films

〇Atsushi Hiraiwa1, Tatsuya Saito2, Daisuke Matsumura2, Hiroshi Kawarada1,2 (1.RONL, Waseda Univ., 2.FSE, Waseda Univ.)

Keywords:Al2O3,charging,electric conduction

According to our previous reports, Au-gated ALD-Al2O3 capacitors allow a large leakage current after heating and recover insulation capability with time in air. These leakage currents follow a FN tunneling process that considers insulator charging. Here we further consider the effect of dipoles at an Al2O3/SiO2 interface, hence improving accuracy of the current-conduction analysis and extending application of the analysis to MIS capacitors with various gate materials.