[13a-4C-1~12] 13.3 Insulator technology

[13a-4C-7] Quantitative Reproduction of the Dipole Layer at high-k/SiO₂ Interface by Molecular Dynamics Simularion Employing an Effective Charge Potential

〇Ryota Kunugi¹, Kosuke Shimura¹, Takanobu Watanabe^1,2 (1.Waseda Univ., 2.Waseda-INN)

Keywords:high-k film,dipole,Molecular Dynamics