10:45 AM - 11:00 AM
[13a-4C-7] Quantitative Reproduction of the Dipole Layer at high-k/SiO2 Interface by Molecular Dynamics Simularion Employing an Effective Charge Potential
Keywords:high-k film,dipole,Molecular Dynamics
Oral presentation
13 Semiconductors » 13.3 Insulator technology
Sun. Sep 13, 2015 9:00 AM - 12:15 PM 4C (432)
座長:渡邉 孝信(早大),右田 真司(産総研)
10:45 AM - 11:00 AM
Keywords:high-k film,dipole,Molecular Dynamics