11:15 AM - 11:30 AM
▼ [13a-4C-9] The critical role of Si chemical potential in SiO2 scavenging in HfO2 gate stacks
Keywords:HfO2 gate stack,scavenging
The reported substrate effect on SiO2 scavenging in HfO2 gate stack is interesting to investigate the SiO2/Si interaction. However, we found substrate is not changed in scavenging. In this paper, we solve the mystery how the substrate-Si affects SiO2 scavenging without changing itself.