[13a-4C-1~12] 13.3 絶縁膜技術

▼ [13a-4C-9] The critical role of Si chemical potential in SiO₂ scavenging in HfO₂ gate stacks

〇(D)Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

キーワード：HfO2 gate stack,scavenging

The reported substrate effect on SiO₂ scavenging in HfO₂ gate stack is interesting to investigate the SiO₂/Si interaction. However, we found substrate is not changed in scavenging. In this paper, we solve the mystery how the substrate-Si affects SiO₂ scavenging without changing itself.