4:00 PM - 4:15 PM
[13p-1A-8] Polarity of Carriers injected from Schottky Barrier of Transition Metal Dichalcogenide α-MoTe2
Keywords:Transition Metal Dichalcogenide,Transistor,Schottky Junction
For the realization of low-power-consumption LSIs on TMDC semiconductor α-MoTe2, we investigated carrier injection property of electrons and holes from Schottky junctions. Especially, we demonstrated Pt-Ti hybrid contacts for the injection of both electrons and holes into intrinsic semiconductor channel from the junction, which will be required in polarity-reversible transistors.