[13p-1A-1~15] Trend of Functional Atomic Thin Film Application

[13p-1A-8] Polarity of Carriers injected from Schottky Barrier of Transition Metal Dichalcogenide α-MoTe₂

〇Shu Nakaharai¹, Mahito Yamamoto¹, Keiji Ueno², Yen-Fu Lin¹, Songlin Li¹, Kazuhito Tsukagoshi¹ (1.NIMS, 2.Saitama Univ.)

Keywords:Transition Metal Dichalcogenide,Transistor,Schottky Junction

For the realization of low-power-consumption LSIs on TMDC semiconductor α-MoTe₂, we investigated carrier injection property of electrons and holes from Schottky junctions. Especially, we demonstrated Pt-Ti hybrid contacts for the injection of both electrons and holes into intrinsic semiconductor channel from the junction, which will be required in polarity-reversible transistors.