[13p-1D-1~26] 15.4 III-V-group nitride crystals

[13p-1D-14] Design of Semipolar AlGaN/AlN Quantum Wells for Stimulated Emissions

〇(D)Shuhei Ichikawa¹, Mitsuru Funato¹, Yosuke Iwasaki², Yoichi Kawakami¹ (1.Kyoto Univ., 2.JFE Mineral Co. Ltd.)

Keywords:AlGaN,semipolar,stimulated emission

AlGaN is one of the most attractive materials for deep ultraviolet light emitting devices. We have realized suppression of internal electric fields in strained quantum wells (QWs) using semipolar plane growth, and achieved much stronger emissions compared with the conventional c-plane QWs. In this presentation, we will discuss design of semipolar AlGaN/AlN QWs for stimulated emissions in terms of in-plane polarization degree, critical thickness, emission wavelength, and so on.