[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-1] Infrared absorption measurement of low concentration carbon in Si crystal
(VII) Second-generation technology to measure down to 1x10¹⁴ cm⁻³ concentration and 1x10¹³ cm⁻³ concentration difference

〇Kaori Watanabe¹, Naohisa Inoue², Yasunori Goto³, Masumi Obuchi⁴, Hirofumi Seki⁵, Noriyuki Uno⁶, Yuichi Kawamura⁷ (1.Systems Engineering, 2.Tokyuo U. Agri&Tech., 3.Toyota Motor Co., 4.Nanoscience, 5.Torai Res., 6.S.H.I Exam., 7.osaka Pref. U.)

Keywords:silicon wafer,Infrared,carbon concentraion

Low-concentration carbon in Si crystal is measured. Artificial reference samples were prepared by electron irradiation to reduce Cs concentraion, by which measurement of about 1E+14 concentration was successfully achieved. Concentration difference of about 1E+13 was also achieved. The authors call the method as the "second-generation technology", which includes not only the artificial reference preparation but also phonon-peak fitting alanysis and sample preparation of various carbon concentration.