[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(10) Irradiation induced complexes in N doped silicon

〇Naohisa Inoue^1,5, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (1.Tokyuo U. Agri&Tech., 2.Toyota Motor Co., 3.Toray Research, 4.Systems Engineering, 5.Osaka Pref. U.)

Keywords:silicon single crystal,infrared absorption,nitrogen - intrinsic point defect complex

Irradiation induced complexes in N doped silicon was examined by high sensitivity infrared absorption spectroscopy. In FZ silicon, N2 absorption reduced and new lines appeared and changed by the annealing. VN2 and VN2 were the candidates of origin of new absorption. N2 absorption did not reduced in CZ silicon.