Oral presentation

[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Sep 13, 2015 1:15 PM - 6:00 PM 1E (143)

座長:小野敏昭(SUMCO),関口隆史(NIMS)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[13p-1E-1] Infrared absorption measurement of low concentration carbon in Si crystal
(VII) Second-generation technology to measure down to 1x10¹⁴ cm⁻³ concentration and 1x10¹³ cm⁻³ concentration difference

〇Kaori Watanabe¹, Naohisa Inoue², Yasunori Goto³, Masumi Obuchi⁴, Hirofumi Seki⁵, Noriyuki Uno⁶, Yuichi Kawamura⁷ (1.Systems Engineering, 2.Tokyuo U. Agri&Tech., 3.Toyota Motor Co., 4.Nanoscience, 5.Torai Res., 6.S.H.I Exam., 7.osaka Pref. U.)

1:30 PM - 1:45 PM

[13p-1E-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(10) Irradiation induced complexes in N doped silicon

〇Naohisa Inoue^1,5, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (1.Tokyuo U. Agri&Tech., 2.Toyota Motor Co., 3.Toray Research, 4.Systems Engineering, 5.Osaka Pref. U.)

1:45 PM - 2:00 PM

[13p-1E-3] Approach of evaluation method for low carbon concentration in silicon crystal

〇Satoko Nakagawa¹, Mitsuo Higasa¹, Kazuhiko Kashima¹ (1.GlobalWafers Japan)

2:00 PM - 2:15 PM

[13p-1E-4] Effect of Low Carbon Concentration on Bulk Carrier Lifetime in MCZ Silicon Crystal (3)

〇Mitsuo Higasa¹, Satoko Nakagawa¹, Kazuhiko Kashima¹, Yuta Nagai¹ (1.GlobalWafers Japan)

2:15 PM - 2:30 PM

[13p-1E-5] Bulk lifetime of free carriers evaluated by laser-beam refraction: I. Demonstration of measuring principle

〇Hiroshi Kaneta¹, Omura Ichiro¹ (1.Kyushu Inst. Tech.)

2:30 PM - 2:45 PM

[13p-1E-6] Bulk lifetime of free carriers evaluated by laser-beam refraction: II. Apparatus and demonstrative measurements

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[13p-1E-7] Investigation of defect structure of impurity-doped lithium tantalate

〇TENSHIN NUMATA¹, Chihiro Koyama¹, Jun Nozawa¹, Satoshi Uda¹ (1.IMR Tohoku Univ.)

3:15 PM - 3:30 PM

[13p-1E-8] Study of the vacancy injection mechanism by high-temperature oxidation in Si crystal

〇Kozo Nakamura¹ (1.Okayama Pref. Univ., Local Joint Research Mechanism)

3:30 PM - 3:45 PM

[13p-1E-9] Enhanced Diffusion of Boron by Oxygen Precipitation in Silicon Crystals

〇Kazuhisa Torigoe¹, Toshiaki Ono¹ (1.SUMCO Corp.)

3:45 PM - 4:00 PM

△ [13p-1E-10] Precipitate Caused in Silicon Crystal by High-Temperature Prolonged Annealing in Nitrogen (Ⅳ)

〇Toru Muramatsu¹, Haruo Nakazawa¹, Masaaki Ogino¹, Hideaki Teranishi¹, Yoshikazu Takahashi¹, Hitoshi Habuka² (1.Fuji Electric, 2.YNU)

4:00 PM - 4:15 PM

[13p-1E-11] High-resolution X-ray topography Under Multiple-Diffraction Conditions
I. Principle and Advantages

〇Junji Matsui¹, Tsusaka Yoshiyuki², Shingo Takeda³, Takano Hidekazu², Yokoyama Kazushi¹, Kagoshima Yasushi² (1.SR Nanotech., U. Hyogo, 2.Mat. Sci., U. Hyogo, 3.SPring-8 Service)

4:15 PM - 4:30 PM

[13p-1E-12] High-resolution X-ray topography Under Multiple-Diffraction Conditions
II. Applications and Developments

〇Shingo Takeda¹, Yoshiyuki Tsusaka², Junji Matsui³, Hidekazu Takano², Kazushi Yokoyama³, Yasushi Kagoshima² (1.SES, 2.Material Sci., Univ. Hyogo, 3.SR Nanotech. Center, Univ. Hyogo)

Break （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

[13p-1E-13] Bonded Silicon on Insulator Wafers for Power Devices - A Study of Deposited BOX and Room Temperature Bonding -

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

5:00 PM - 5:15 PM

△ [13p-1E-14] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers
- Defect Characterization of Carbon Cluster Projected Range by Laser Scattering -

〇TAKESHI KADONO¹, RYOUSUKE OKUYAMA¹, RYOU HIROSE¹, YOSHIHIRO KOGA¹, HIDEIKO OKUDA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

5:15 PM - 5:30 PM

[13p-1E-15] Thermo-statistical modeling for getterings in a silicon wafer

Eiji Kamiyama^1,2, 〇Kouji Sueoka¹ (1.Okayama Pref. Univ., 2.Globalwafers)

5:30 PM - 5:45 PM

▲ [13p-1E-16] Numerical analysis of SiC and SiO₂ deposition processes by gas-solid interaction in Czochralski silicon crystal growth

〇(P)Xin Liu¹, Bing Gao¹, Satoshi Nakano¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

5:45 PM - 6:00 PM

△ [13p-1E-17] Growth Simulation of MgO Crystal on SiO₂ Substrate by Molecular Dynamics Method

〇Shunsuke Kawagishi¹, Takuya Kuwahara¹, Jingxiang Xu¹, Takeshi Nishimatsu¹, Yuji Higuchi¹, Nobuki Ozawa², Momoji Kubo¹ (1.Institute for Materials Research, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ.)

Poster presentation

[14p-PB7-1~5] 15.8 Crystal evaluation, impurities and crystal defects

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PB7 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[14p-PB7-1] Silicon Interstitials by Over Heated Melt during Pulling Stop of CZ Silicon Crystals

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.ShinEtsu Handotai, 2.ISIR, Osaka Univ.)

4:00 PM - 6:00 PM

△ [14p-PB7-2] First principles analysis on proximity gettering sites formed by C₃H₅ cluster ion implantations

〇sho shirasawa¹, Koji Sueoka¹, Tadashi Yamaguchi², Kazuyoshi Maekawa³ (1.Okayama Pref. Univ., 2.Renesas Electronics, 3.Renesas Semiconductor Manufacturing)

4:00 PM - 6:00 PM

△ [14p-PB7-3] Evalution of SiC crystal with laser annealing

〇mizuki uchimori¹, Fulvio Mazzamuto², Shuichi Ono³, Manabu Arai³, Hidekazu Yamamoto¹ (1.Chiba Institute of Technology, 2.LASSE, 3.New Japan Radio Co.,Ltd.)

4:00 PM - 6:00 PM

△ [14p-PB7-4] Evaluation of GaN wafer for power devices by Raman spectroscopy(3)

〇(M1)naoki ikeda¹, hidekazu yamamoto¹ (1.Chiba Institute of Technology)

4:00 PM - 6:00 PM

△ [14p-PB7-5] Evaluation of GaN wafer for power devices by Raman Spectroscopy (4)

〇(M1)Kazuya Agui¹, Hidekazu Yamamoto¹ (1.Chibakou Inst.)

Sessions

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-1] Infrared absorption measurement of low concentration carbon in Si crystal
(VII) Second-generation technology to measure down to 1x10¹⁴ cm⁻³ concentration and 1x10¹³ cm⁻³ concentration difference

[13p-1E-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(10) Irradiation induced complexes in N doped silicon

[13p-1E-3] Approach of evaluation method for low carbon concentration in silicon crystal

[13p-1E-4] Effect of Low Carbon Concentration on Bulk Carrier Lifetime in MCZ Silicon Crystal (3)

[13p-1E-5] Bulk lifetime of free carriers evaluated by laser-beam refraction: I. Demonstration of measuring principle

[13p-1E-6] Bulk lifetime of free carriers evaluated by laser-beam refraction: II. Apparatus and demonstrative measurements

[13p-1E-7] Investigation of defect structure of impurity-doped lithium tantalate

[13p-1E-8] Study of the vacancy injection mechanism by high-temperature oxidation in Si crystal

[13p-1E-9] Enhanced Diffusion of Boron by Oxygen Precipitation in Silicon Crystals

△ [13p-1E-10] Precipitate Caused in Silicon Crystal by High-Temperature Prolonged Annealing in Nitrogen (Ⅳ)

[13p-1E-11] High-resolution X-ray topography Under Multiple-Diffraction Conditions
I. Principle and Advantages

[13p-1E-12] High-resolution X-ray topography Under Multiple-Diffraction Conditions
II. Applications and Developments

[13p-1E-13] Bonded Silicon on Insulator Wafers for Power Devices - A Study of Deposited BOX and Room Temperature Bonding -

△ [13p-1E-14] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers
- Defect Characterization of Carbon Cluster Projected Range by Laser Scattering -

[13p-1E-15] Thermo-statistical modeling for getterings in a silicon wafer

▲ [13p-1E-16] Numerical analysis of SiC and SiO₂ deposition processes by gas-solid interaction in Czochralski silicon crystal growth

△ [13p-1E-17] Growth Simulation of MgO Crystal on SiO₂ Substrate by Molecular Dynamics Method

[14p-PB7-1~5] 15.8 Crystal evaluation, impurities and crystal defects

[14p-PB7-1] Silicon Interstitials by Over Heated Melt during Pulling Stop of CZ Silicon Crystals

△ [14p-PB7-2] First principles analysis on proximity gettering sites formed by C₃H₅ cluster ion implantations

△ [14p-PB7-3] Evalution of SiC crystal with laser annealing

△ [14p-PB7-4] Evaluation of GaN wafer for power devices by Raman spectroscopy(3)

△ [14p-PB7-5] Evaluation of GaN wafer for power devices by Raman Spectroscopy (4)

Authentication

Sessions

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

△ [13p-1E-10] Precipitate Caused in Silicon Crystal by High-Temperature Prolonged Annealing in Nitrogen (Ⅳ)

△ [13p-1E-14] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers- Defect Characterization of Carbon Cluster Projected Range by Laser Scattering -

▲ [13p-1E-16] Numerical analysis of SiC and SiO2 deposition processes by gas-solid interaction in Czochralski silicon crystal growth

△ [13p-1E-17] Growth Simulation of MgO Crystal on SiO2 Substrate by Molecular Dynamics Method

[14p-PB7-1~5] 15.8 Crystal evaluation, impurities and crystal defects

△ [14p-PB7-2] First principles analysis on proximity gettering sites formed by C3H5 cluster ion implantations

△ [14p-PB7-3] Evalution of SiC crystal with laser annealing

△ [14p-PB7-4] Evaluation of GaN wafer for power devices by Raman spectroscopy(3)

△ [14p-PB7-5] Evaluation of GaN wafer for power devices by Raman Spectroscopy (4)

Authentication

△ [13p-1E-14] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers
- Defect Characterization of Carbon Cluster Projected Range by Laser Scattering -

▲ [13p-1E-16] Numerical analysis of SiC and SiO₂ deposition processes by gas-solid interaction in Czochralski silicon crystal growth

△ [13p-1E-17] Growth Simulation of MgO Crystal on SiO₂ Substrate by Molecular Dynamics Method

△ [14p-PB7-2] First principles analysis on proximity gettering sites formed by C₃H₅ cluster ion implantations