[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

△ [13p-1E-14] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers
- Defect Characterization of Carbon Cluster Projected Range by Laser Scattering -

〇TAKESHI KADONO¹, RYOUSUKE OKUYAMA¹, RYOU HIROSE¹, YOSHIHIRO KOGA¹, HIDEIKO OKUDA¹, KAZUNARI KURITA¹ (1.SUMCO CORPORATION)

Keywords:Proximity Gettering,Cluster irradiation,Silicon wafer

The gettering capability of carbon-cluster irradiation silicon wafer strongly depends on carbon-cluster irradiation condition was investigated. Then, we have to develop the evaluation technique of carbon-cluster irradiation projected range on the silicon wafer surface for the optimum cluster irradiation conditions such as acceleration energy, dose amounts and cluster sizes . In this work, we evaluated formation behavior of cluster irradiation induced defect in the carbon-cluster projected range using by laser scattering method. As a result, we confirmed that this method was extremely useful evaluation technique for carbon-cluster irradiation induced defects in the carbon-cluster projected range.