The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Sep 13, 2015 1:15 PM - 6:00 PM 1E (143)

座長:小野 敏昭(SUMCO),関口 隆史(NIMS)

4:15 PM - 4:30 PM

[13p-1E-12] High-resolution X-ray topography Under Multiple-Diffraction Conditions
II. Applications and Developments

〇Shingo Takeda1, Yoshiyuki Tsusaka2, Junji Matsui3, Hidekazu Takano2, Kazushi Yokoyama3, Yasushi Kagoshima2 (1.SES, 2.Material Sci., Univ. Hyogo, 3.SR Nanotech. Center, Univ. Hyogo)

Keywords:topography,high-resolution,multiple-diffraction

X-ray topographs taken by forward transmitted X-rays under the multiple diffraction conditions change the image contrast of the dislocations depending on the Burgers vectors as usual topographs. It is demonstrated that the topographs of a sapphire wafer reveal a high spatial resolution for the area where the dislocations are entangled. It is possible to obtain the X-ray topographs for the crystals with a relatively high dislocation density without any crystal rotation to change the diffraction vectors.