The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[13p-1E-1~17] 15.8 Crystal evaluation, impurities and crystal defects

Sun. Sep 13, 2015 1:15 PM - 6:00 PM 1E (143)

座長:小野 敏昭(SUMCO),関口 隆史(NIMS)

4:00 PM - 4:15 PM

[13p-1E-11] High-resolution X-ray topography Under Multiple-Diffraction Conditions
I. Principle and Advantages

〇Junji Matsui1, Tsusaka Yoshiyuki2, Shingo Takeda3, Takano Hidekazu2, Yokoyama Kazushi1, Kagoshima Yasushi2 (1.SR Nanotech., U. Hyogo, 2.Mat. Sci., U. Hyogo, 3.SPring-8 Service)

Keywords:High-spatial-resolution X-ray topography,Multiple diffraction,Dislocation

X-ray topography under the multiple diffraction conditions has been performed by employing forward transmitted X-ray beams (000-reflection) instead of diffracted beams. The topographs show no position shifts of the dialocation line images or no shape deformations of the whole crystal depending on g-vectors. In addition, by employing an X-ray detector consisting of CMOS arrays and fluorescence material, dislocation line images are narrow as compared with the usual topography resulting in a high spatial resolution of the topographs, because of a high Intensity linearity of the detector for the incident X-rays.