[14p-PB7-1~5] 15.8 Crystal evaluation, impurities and crystal defects

△ [14p-PB7-3] Evalution of SiC crystal with laser annealing

〇mizuki uchimori¹, Fulvio Mazzamuto², Shuichi Ono³, Manabu Arai³, Hidekazu Yamamoto¹ (1.Chiba Institute of Technology, 2.LASSE, 3.New Japan Radio Co.,Ltd.)

Keywords:power device,SiC,laser annealing