[13p-4C-1~9] What is the last knob of Ge-CMOS?

▲ [13p-4C-2] High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

〇Rui Zhang¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

Keywords:Ge CMOS Devices

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation