[13p-4C-1~9] Ge-CMOSはどこまで進んでいるのか

▲ [13p-4C-4] How to secure both sufficient passivation and long term reliability in Ge gate stack
-The key is to keep a proper network structure of oxides-

〇Cimang Lu¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

キーワード：Germanium,Reliability,Interface

The current research on Ge gate stack has pointed out that GeO₂ might be the best passivation for Ge interface. However, a good initial passivation of Ge interface does not secure the long term reliability because the optimum bond configuration does not mean it’s strong against electric stress field. In this work, we point out that, both the initial passivation and long term reliability are dependent on the network of the oxide, and the way to secure both is to tune a flexible and strong network structure. As an example, Y-GeO₂ with suitable Y composition demonstrate both good inital passivation and long term reliability.