[13p-4C-1~9] What is the last knob of Ge-CMOS?

[13p-4C-8] Trends in Developing Ge-CMOS Integration Technologies

〇Tsutomu Tezuka^1,2, Keiji Ikeda^1,2, Toshifumi Irisawa², Yoshiki Kamata^1,2, Koji Usuda^1,2, Yuuichi Kamimuta^1,2, Yoshihiko Moriyama^1,2, Masahiro Koike^1,2, Minoru Oda^1,2, Mizuki Ono^1,2 (1.Toshiba R&D Center, 2.GNC-AIST)

Keywords:germanium,CMOS,MOSFET

Ge transistors are expected to be introduced in the 7-nm technology node and beyond. How to integrate Ge devices on a Si CMOS platform is one of the most significant issues because it will be the first time that non-Si MOSFETs are implemented in scaled CMOS technologies. In this presentation, various integration schemes are reviewed with our recent results on Ge-CMOS.