[14p-1C-1~16] 13.4 Si wafer processing /MEMS/Integration technology

[14p-1C-7] Printing deposition of thin Cu films under-short-distance irradiation of ballistic electrons

〇Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (1.Tokyo Univ. of Agri. & Technol.)

Keywords:electron emitter,thin film deposition,reduction

Ballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode induce reducing effects in salt solutions, leading to deposition of metal or semiconductor thin films. Based on previously reported thin film deposition under dipping and dripping modes in which thin films are deposited on the surface of the nc-Si emitter, we have developed a printing mode. A target substrate is separately located in close proximity to the emitter, and then emitted electrons impinge upon solutions coated on the substrate. It is demonstrated here that thin Cu films can be deposited on oxidized Si substrates.