[14p-4C-1~6] Dielectric Thin Film Technology Beyond Borders: From Si to Non-Si

[14p-4C-4] Progress and Challenges in SiC MOS Interface toward SiC Power Devices

〇Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:SiC,MOS interface,power device

SiC has received increasing attention as a promising semiconducotr for advanced power devices. Since thermal oxidation of SiC yields SiO₂, SiC power MOSFETs are regarded as one of ideal power switching devices for 600-6500 V applications. However, there still exists a high density of interface states and oxide traps near the SiC MOS interface, which severely affect the performance and reliability of SiC power MOSFETs. In this talk, present status and challenges in SiC MOS interface are reviewed.