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Symposium » Dielectric Thin Film Technology Beyond Borders: From Si to Non-Si

[14p-4C-1~6] Dielectric Thin Film Technology Beyond Borders: From Si to Non-Si

Mon. Sep 14, 2015 1:30 PM - 4:45 PM 4C (432)

座長:小山正人(東芝),渡邉孝信(早大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 2:00 PM

[14p-4C-1] What were the key points in high-k gate stacks?

〇Kenji Shiraishi¹ (1.Nagoya Univ.)

2:00 PM - 2:30 PM

[14p-4C-2] High-μ channel and its MOS interface control

〇Tatsuro Maeda¹, Tetsuji Yasuda¹ (1.AIST)

2:30 PM - 3:00 PM

[14p-4C-3] GeO₂/Ge interface control for Ge CMOS

〇Akira Toriumi¹ (1.Univ. Tokyo)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:45 PM

[14p-4C-4] Progress and Challenges in SiC MOS Interface toward SiC Power Devices

〇Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:45 PM - 4:15 PM

[14p-4C-5] Interface Engineering and Development of Gate Insulators for SiC Power MOS Devices

〇Heiji Watanabe¹, Takuji Hosoi¹ (1.Osaka Univ.)

4:15 PM - 4:45 PM

[14p-4C-6] MOS interface technologies for GaN-based power devices

〇Tamotsu Hashizume¹ (1.Hokkaido Univ.)

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