[14p-4C-1~6] Dielectric Thin Film Technology Beyond Borders: From Si to Non-Si

[14p-4C-3] GeO₂/Ge interface control for Ge CMOS

〇Akira Toriumi¹ (1.Univ. Tokyo)

Keywords:semiconductor,germanium,mobility

We would like to discuss about Ge n-channel MOSFETs for high perfromance Ge CMOS, by focusing on the interface control from viewpoint of what is different from Si and of what we shoudl take care of in Ge.