[14p-4E-1~21] 7.6 Ion beams

[14p-4E-19] Observation of Si/Al interface in a hot environment using TOF-SIMS

〇Norimichi Watanabe¹, Hiroaki Mamiya¹, Fujio Abe², Masataka Ohkubo³, Hideaki Kitazawa¹ (1.NIMS Quantum Beam, 2.NIMS Materials Reliability, 3.AIST Electronics and Manufacturing)

Keywords:Time-of-Flight Secondary Ion Mass Spectrometry,sample heating stage

We introduced a sample heating stage into the TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) to investigate diffusion phenomenon of hydrogen, oxygen and water at the interface between environmental barrier coating and refractory metals. We fabricated the Al(25nm)/Co(2nm) thin film on the Si substrate as a test sample. We observed the Si/Al interface in a hot environment using TOF-SIMS.