[14p-PA4-1~9] 3.15 Silicon photonics

△ [14p-PA4-5] Void reduction by using Al₂O₃/HfO₂ interface for wafer-bonded MOS optical modulators

〇(DC)JAEHOON HAN^1,2,3, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST, 3.JSPS-DC1)

Keywords:MOS optical modulators,Direct wafer bonding,Void reduction

We have investigated the reduction of void generation on the bonded wafers fabricated by thin-EOT direct wafer bonding (DWB) method for high-performance Si high-k MOS optical modulators. Although the voids cannot be completely removed from the bonded wafer using Al₂O₃, the voids are successfully eliminated from the bonded wafer using Al₂O₃/HfO₂ when annealing temperature is up to 700ºC.