[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-3] Relationship between the convection in Si-based melt and growth thickness in solution growth of SiC from the crucible bottom

〇(M1)Hodaka Kutsukake¹, Kento Hine¹, Toshinori Taishi^1,2 (1.Shinshu Univ., 2.SEES Shinshu Univ.)

Keywords:silicon carbide,solution growth

Numerical computation of convection in Si-based melt in solution growth of SiC from the crucible bottom was investigated. Obtained results were compared with experimental results of the solution growth. The melt flow in the melt can be controlled by the crucible rotation and the shape of the crucible. It was found that the growth thickness of SiC obtained experimentally was in good agreement with the melt flow obtained numerically.