The 76th JSAP Autumn Meeting, 2015

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Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PB6 (Shirotori Hall)

4:00 PM - 6:00 PM

[14p-PB6-4] Impact Ionization Rate of 4H-SiC in the GW Approximation

〇(M1)Kosuke Konaga1, Takao Kotani2, Yoshinari Kamakura1, Nobuya Mori1 (1.Osaka Univ., 2.Tottori Univ.)

Keywords:4H-SiC