[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-9] Removal of damaged layer on 4H-SiC surface and its effects using Si-vapor etching

〇Satoshi Torimi¹, Norihito Yabuki¹, Masato Shinohara¹, Youji Teramoto¹, Satoru Nogami¹, Tadaaki Kaneko² (1.Toyo Tanso Corp., 2.Kwansei Gakuin Univ.)

Keywords:SiC,Si-vapor etching,damage layer

In this work, we focused on the removal of SiC surface damage from mechanical polishing. We utilized the thermal-chemical etching under Si-vapor ambient, so-called Si-vapor etching method. The effect of removal of damage layer was confirmed through epitaxial growth and high temperature treatment simulating to activation annealing process via the evaluation of SiC surface morphology variations and crystal defects.