The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15a-1D-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 15, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:小林 康之(弘前大),太田 実雄(東大)

9:45 AM - 10:00 AM

[15a-1D-5] Eu incorporation mechanism of Eu doped GaN grown by rf-MBE

〇hiroyuki tahara1, hiroto sekiguchi1, keisuke yamane1, hiroshi okada2,1, akihiro wakahara1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

Keywords:rare-earth doped semiconductor,Eu