[15a-1E-1~10] 3.13 Semiconductor optical devices

[15a-1E-9] Improved Specific Detectivity of QDIP by Surface Plasmon Coupling

〇Sota Kagami^1,2, Tomo Tanaka^1,2, Masahiro Kakuda², Katsuyuki Watanabe³, Yuichi Igarashi^1,2, Chenhui Huang¹, Masahiro Tanomura¹, Masayuki Shirane^1,2, Tsuyoshi Yamamoto^1,2, Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (1.NEC Corporation, 2.NanoQuine, 3.IIS the Univ. of Tokyo)

Keywords:quantum dot,plasmon,photodetector

We fabricated a plasmon antenna on top of Quantum Dot Infrared Photodetectors (QDIPs) by which high responsivity was expected due to enhancement of electric field of incident infrared rays. The plasmon antenna is a 100 nm thick gold film perforated with a few um period square array of circular holes. We designed the period of circular holes of plasmon antenna of which surface plasmon resonant wavelength was matched to the peak wavelength of spectral responsivity of the QDIPs. As a result, we have achieved improvement of specific detectivity of QDIPs by a factor of 2.