Poster presentation

[14p-PA8-1~3] 3.13 Semiconductor optical devices

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PA8 (Event Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

△ [14p-PA8-1] Suppression of timing jitter in gain-switched multimode semiconductor lasers

〇(M1)naoaki kitagawa¹, Kenji Wada¹, Tetsuya Matsuyama¹, Hiromichi Horinaka¹ (1.Osaka Pref Univ.)

4:00 PM - 6:00 PM

[14p-PA8-2] Cavity length dependence on threshold current density of InAs/InP quantum dots laser

〇(M1)Tetsuo Nishiyama¹, Sukigara Toshiki¹, Kamada Naoki¹, Shimomura Kazuhiko¹ (1.Sophia Univ.)

4:00 PM - 6:00 PM

[14p-PA8-3] Absorption Spectroscopy for Photo-Induced Defects in Ce:GAGG Crystals

〇Mamoru Kitaura¹, Ryota Inaba², Kei Kamada³, Shunsuke Kurosawa^3,4, Akimasa Ohnishi¹, Kazuhiko Hara⁵ (1.Yamagata Univ., 2.Yamagata Univ. Graduate School of Science and Engineering, 3.Tohoku Univ. NICHe, 4.Tohoku Univ. IMR, 5.Shizuoka Univ. RIE)

Oral presentation

[15a-1E-1~10] 3.13 Semiconductor optical devices

Tue. Sep 15, 2015 9:00 AM - 11:30 AM 1E (143)

座長:沼居貴陽(立命大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-1E-1] Solar Hydrogen Evolution using ZnSe-Cu(In,Ga)Se₂ Thin Film

〇(M2)Hiroyuki Kaneko¹, Tsutomu Minegishi¹, Kazunari Domen¹ (1.Tokyo Univ.)

9:15 AM - 9:30 AM

[15a-1E-2] Fabrication and Characterization of High Density Si_1-xGe_x Nanodisks using Combination of Bio-template and Neutral Beam Etching

〇Takuya Fujii^1,2, Kentarou Sawano³, Seiji Samukawa¹ (1.Tohoku Univ., 2.Honda R&D Co., Ltd., 3.Tokyo City Univ.)

9:30 AM - 9:45 AM

[15a-1E-3] Diffusion Reflector Using Dielectric Nano-particle/SiO₂ Composit Structure

〇Takuya Murooka¹, Hiroshi Nagayoshi¹ (1.Tokyo NCT)

9:45 AM - 10:00 AM

[15a-1E-4] Development of Organic-Inorganic Hybrid Structure ZnSe Semiconductor Ultraviolet APD ~Cross-talk of APD Array ~

〇Shigeto Uchida¹, Kenta Tanaka¹, Ryoichi Inoue¹, Takeru Fujimoto¹, Akio Tazue¹, Hiroki Hirano¹, Takuya Kano¹, Tomoki Abe¹, Hirohumi Kasada¹, Koshi Ando¹, Kunio Ichino¹ (1.Tottori Univ.)

10:00 AM - 10:15 AM

[15a-1E-5] Temporal and temperature dependences of transient dark count in APD

〇Makoto Akiba¹, Kenji Tsujino² (1.NICT, 2.TWMU)

10:15 AM - 10:30 AM

△ [15a-1E-6] Design of semiconductor membrane photodetector with distributed-reflector

〇(D)Takuo Hiratani¹, Amemiya Tomohiro², Nishiyama Nobuhiko¹, Arai Shigehisa^1,2 (1.Tokyo Tech, 2.QNERC)

10:30 AM - 10:45 AM

[15a-1E-7] Dark Current Reduction and 300K Operation of IR Triangular Barrier Phototransistors

〇Kazuya Sugimura¹, Masato Ohmori¹, Takeshi Noda², Pavel Vitushinskiy¹, Naotaka Iwata¹, Hiroyuki Sakaki^1,2 (1.Toyota Tech. Inst., 2.NIMS)

10:45 AM - 11:00 AM

△ [15a-1E-8] High-Responsivity of Photodetector for Coherent Receiver by Low Propagation Loss of InP-Based 90^o Hybrid

〇Takehiko Kikuchi¹, Hideki Yagi^1,2, Ryuji Masuyama^1,2, Kenji Sakurai², Yoshifumi Nishimoto², Kazuhiko Horino^1,2, Mitsuru Ekawa¹, Yoshihiro Yoneda², Hajime Shoji¹ (1.Sumitomo Electric Industries, Ltd., 2.Sumitomo Electric Device Innovations, Inc.)

11:00 AM - 11:15 AM

[15a-1E-9] Improved Specific Detectivity of QDIP by Surface Plasmon Coupling

〇Sota Kagami^1,2, Tomo Tanaka^1,2, Masahiro Kakuda², Katsuyuki Watanabe³, Yuichi Igarashi^1,2, Chenhui Huang¹, Masahiro Tanomura¹, Masayuki Shirane^1,2, Tsuyoshi Yamamoto^1,2, Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (1.NEC Corporation, 2.NanoQuine, 3.IIS the Univ. of Tokyo)

11:15 AM - 11:30 AM

[15a-1E-10] Toward an improvement in the quantum efficiency of Charge-Sensitive Infrared Phototransistors (CSIP)

〇Sunmi Kim¹, Susumu Komiyama^2,3, Mikhail Patrashin³, Iwao Hosako³, Yusuke Kajihara¹ (1.IIS, Univ. of Tokyo, 2.Dept. Basic Sci., Univ. of Tokyo, 3.NICT)

Oral presentation

[16a-2E-1~9] 3.13 Semiconductor optical devices

Wed. Sep 16, 2015 10:00 AM - 12:15 PM 2E (221-1)

座長:尾崎信彦(和歌山大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[16a-2E-1] Infrared Absorption Spectroscopy for Electron Traps in SrAl₂O₄:Eu Single Crystals Excited by Ultraviolet Light

〇Mamoru Kitaura¹, Yuta Tsurumi¹, Akimasa Ohnishi¹, Tomoya Ishibashi², Shoko Furukawa², Hisaya Oda², Akio Yamanaka² (1.Yamagata Univ., 2.Chitose Institute of Science and Technology)

10:15 AM - 10:30 AM

[16a-2E-2] Enhancement of Nonlinear Optical Signal Using Ultrashort-pulse Excitation in CuCl High-quality Thin Films

〇Masayoshi Ichimiya^1,2, Subaru Saeki², Takayuki Umakoshi², Takashi Kinoshita³, Hajime Ishihara³, Masaaki Ashida² (1.Univ. of Shiga Pref., 2.Osaka Univ., 3.Osaka Pref. Univ.)

10:30 AM - 10:45 AM

▲ [16a-2E-3] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy

〇(P)Neul Ha¹, Takaaki Mano¹, Takashi Kuroda¹, Shun-Jen Cheng², Paul M. Koenraad³, Akihiro Ohtake¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS, 2.NCTU-ROC, 3.TU Eindhoven)

10:45 AM - 11:00 AM

△ [16a-2E-4] Design of Metallic-Cavity Optical Modulator integrated on InP waveguide

〇(M2)Koh Chieda¹, Baifu Zhang¹, Takuya Okimoto¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (1.Univ.of Tokyo)

11:00 AM - 11:15 AM

[16a-2E-5] Approximate solutions of resonator modes corresponding to stable periodic orbits in a Penrose cavity

〇Takehiro Fukushima¹, Takao Sarata¹, Koichiro Sakaguchi¹, Yasunori Tokuda¹ (1.Okayama Pref. Univ.)

11:15 AM - 11:30 AM

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing method
for application to carrier confinement of VCSEL

〇(M2)Shouhei Moriwaki¹, Minoru Saitou¹, Shougo Kunisada¹, Tomoyuki Miyamoto¹ (1.Tokyo Inst.)

11:30 AM - 11:45 AM

△ [16a-2E-7] Lasing of Two-Color Surface Emitting Laser by Coupled Cavity Structure with QW

〇(M1)Hiroto Ota¹, Tomohisa Maekawa¹, Xiangmeng Lu¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Tokushima Univ.)

11:45 AM - 12:00 PM

[16a-2E-8] Transverse-mode coupled cavity VCSELs with high speed beam switching

〇Masanori Nakahama¹, Xiaodong Gu¹, Takahiro Sakaguchi¹, Akihiro Matsutani², Fumio Koyama¹ (1.Tokyo Tech., 2.MEMS process, Tokyo Tech.)

12:00 PM - 12:15 PM

▲ [16a-2E-9] First Demonstration of 850 nm Transverse Coupled Cavity Vertical Cavity Surface-Emitting Laser

〇(PC)XIAODONG GU¹, MASANORI NAKAHAMA¹, AKIHIRO MATSUTANI², FUMIO KOYAMA¹ (1.P&I Lab. Tokyo Tech., 2.Tech. Depart. Tokyo Tech.)

Oral presentation

[16p-2E-1~9] 3.13 Semiconductor optical devices

Wed. Sep 16, 2015 1:45 PM - 4:30 PM 2E (221-1)

座長:丸山武男(金沢大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:15 PM

[16p-2E-1] [JSAP Paper Award Speech] Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

〇Kazunori Shinoda¹, Koichiro Adachi¹, Yong Lee¹, Takeshi Kitatani¹, Toshihiko Fukamachi¹, Hiroki Yamashita¹, Takashi Takemoto¹, Fumio Yuuki¹, Toshiki Sugawara¹, Shigehisa Tanaka¹, Shinji Tsuji¹ (1.Hitachi, Ltd.)

2:15 PM - 2:30 PM

[16p-2E-2] Dependence of Laser Characteristics on Facet Phases of Resonance-Shifted DFB-LD

〇(M2)Keiichiro Ichikawa¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

2:30 PM - 2:45 PM

[16p-2E-3] Lasing Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser
with Thinned p-GaInAsP Base Layer

〇shoutarou tadano¹, Takumi Yoshida¹, Takaaki Kaneko¹, Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (1.Tokyo Inst., 2.QNERC)

2:45 PM - 3:00 PM

△ [16p-2E-4] Integration of GaInAsP-InP double-hetero laser on wafer bonded InP/Si substrate using MOVPE

〇Keiichi Matsumoto¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Yuta Yamamoto¹, Toshiki Sukigara¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Break （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[16p-2E-5] Stability of Temperature Characteristics in External Cavity Quantum Dot Comb Laser

〇Nami Yasuoka¹, Ishida Mitsuru², Yamaguchi Masaomi², Uetake Ayahito², Takemoto Kazuya², Yamamoto Tuyoshi², Arakawa Yasuhiko¹ (1.INQIE, Univ. of Tokyo, 2.Fujitsu Labs.)

3:30 PM - 3:45 PM

[16p-2E-6] Effect on High Frequency Characteristics by Thinner Barrier Layer in GaP Strain-Compensated InAs/GaAs Quantum Dot Laser

〇Takeo Kageyama¹, Katsuyuki Watanabe², Vo Quoc Huy², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.QD Laser)

3:45 PM - 4:00 PM

[16p-2E-7] Accepter concentration dependency of modulation doped InAs/InP double capped quantum dots structure

〇(M2)Toshiki Sukigara¹, Yuta Yamamoto¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

4:00 PM - 4:15 PM

[16p-2E-8] Optical gain measurements by the segmented contact method for a broadband SLD including multiple InAs quantum dots with controlled emission wavelengths

〇Nobuhiko Ozaki^1,2, David Childs¹, Takuma Yasuda², Hirotaka Ohsato³, Eiichiro Watanabe³, Naoki Ikeda³, Yoshimasa Sugimoto³, Richard Hogg¹ (1.Univ. Sheffield, 2.Wakayama Univ., 3.NIMS)

4:15 PM - 4:30 PM

[16p-2E-9] Quantum dot optical gain modulator integrated with semiconductor optical amplifier for T-Band Optical Communication

〇Toshifumi Emori^1,2, Naokatsu Yamamoto¹, Kouichi Akabane¹, Toshimasa Umezawa¹, Atsushi Matsumoto¹, Tetsuya Kawanishi^1,3, Katsuki Watanabe^1,2, Hiroshi Takai² (1.NICT, 2.Denki Univ., 3.Waseda Univ.)

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[14p-PA8-1~3] 3.13 Semiconductor optical devices

△ [14p-PA8-1] Suppression of timing jitter in gain-switched multimode semiconductor lasers

[14p-PA8-2] Cavity length dependence on threshold current density of InAs/InP quantum dots laser

[14p-PA8-3] Absorption Spectroscopy for Photo-Induced Defects in Ce:GAGG Crystals

[15a-1E-1~10] 3.13 Semiconductor optical devices

[15a-1E-1] Solar Hydrogen Evolution using ZnSe-Cu(In,Ga)Se₂ Thin Film

[15a-1E-2] Fabrication and Characterization of High Density Si_1-xGe_x Nanodisks using Combination of Bio-template and Neutral Beam Etching

[15a-1E-3] Diffusion Reflector Using Dielectric Nano-particle/SiO₂ Composit Structure

[15a-1E-4] Development of Organic-Inorganic Hybrid Structure ZnSe Semiconductor Ultraviolet APD ~Cross-talk of APD Array ~

[15a-1E-5] Temporal and temperature dependences of transient dark count in APD

△ [15a-1E-6] Design of semiconductor membrane photodetector with distributed-reflector

[15a-1E-7] Dark Current Reduction and 300K Operation of IR Triangular Barrier Phototransistors

△ [15a-1E-8] High-Responsivity of Photodetector for Coherent Receiver by Low Propagation Loss of InP-Based 90^o Hybrid

[15a-1E-9] Improved Specific Detectivity of QDIP by Surface Plasmon Coupling

[15a-1E-10] Toward an improvement in the quantum efficiency of Charge-Sensitive Infrared Phototransistors (CSIP)

[16a-2E-1~9] 3.13 Semiconductor optical devices

[16a-2E-1] Infrared Absorption Spectroscopy for Electron Traps in SrAl₂O₄:Eu Single Crystals Excited by Ultraviolet Light

[16a-2E-2] Enhancement of Nonlinear Optical Signal Using Ultrashort-pulse Excitation in CuCl High-quality Thin Films

▲ [16a-2E-3] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy

△ [16a-2E-4] Design of Metallic-Cavity Optical Modulator integrated on InP waveguide

[16a-2E-5] Approximate solutions of resonator modes corresponding to stable periodic orbits in a Penrose cavity

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing method
for application to carrier confinement of VCSEL

△ [16a-2E-7] Lasing of Two-Color Surface Emitting Laser by Coupled Cavity Structure with QW

[16a-2E-8] Transverse-mode coupled cavity VCSELs with high speed beam switching

▲ [16a-2E-9] First Demonstration of 850 nm Transverse Coupled Cavity Vertical Cavity Surface-Emitting Laser

[16p-2E-1~9] 3.13 Semiconductor optical devices

[16p-2E-1] [JSAP Paper Award Speech] Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

[16p-2E-2] Dependence of Laser Characteristics on Facet Phases of Resonance-Shifted DFB-LD

[16p-2E-3] Lasing Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser
with Thinned p-GaInAsP Base Layer

△ [16p-2E-4] Integration of GaInAsP-InP double-hetero laser on wafer bonded InP/Si substrate using MOVPE

[16p-2E-5] Stability of Temperature Characteristics in External Cavity Quantum Dot Comb Laser

[16p-2E-6] Effect on High Frequency Characteristics by Thinner Barrier Layer in GaP Strain-Compensated InAs/GaAs Quantum Dot Laser

[16p-2E-7] Accepter concentration dependency of modulation doped InAs/InP double capped quantum dots structure

[16p-2E-8] Optical gain measurements by the segmented contact method for a broadband SLD including multiple InAs quantum dots with controlled emission wavelengths

[16p-2E-9] Quantum dot optical gain modulator integrated with semiconductor optical amplifier for T-Band Optical Communication

Authentication

Sessions

3 Optics and Photonics » 3.13 Semiconductor optical devices

[14p-PA8-1~3] 3.13 Semiconductor optical devices

△ [14p-PA8-1] Suppression of timing jitter in gain-switched multimode semiconductor lasers

[15a-1E-1~10] 3.13 Semiconductor optical devices

△ [15a-1E-6] Design of semiconductor membrane photodetector with distributed-reflector

△ [15a-1E-8] High-Responsivity of Photodetector for Coherent Receiver by Low Propagation Loss of InP-Based 90o Hybrid

[16a-2E-1~9] 3.13 Semiconductor optical devices

▲ [16a-2E-3] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy

△ [16a-2E-4] Design of Metallic-Cavity Optical Modulator integrated on InP waveguide

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing methodfor application to carrier confinement of VCSEL

△ [16a-2E-7] Lasing of Two-Color Surface Emitting Laser by Coupled Cavity Structure with QW

▲ [16a-2E-9] First Demonstration of 850 nm Transverse Coupled Cavity Vertical Cavity Surface-Emitting Laser

[16p-2E-1~9] 3.13 Semiconductor optical devices

△ [16p-2E-4] Integration of GaInAsP-InP double-hetero laser on wafer bonded InP/Si substrate using MOVPE

Authentication

△ [15a-1E-8] High-Responsivity of Photodetector for Coherent Receiver by Low Propagation Loss of InP-Based 90^o Hybrid

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing method
for application to carrier confinement of VCSEL