[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-12] Hole capture cross section of Al level in 4H-SiC

〇(M2)DI JING¹, MASASHI KATO¹, MASAYA ICHIMURA¹, KAZUTOSHI KOJIMA² (1.Nagoya Inst. Tech., 2.AIST)

Keywords:4H-SiC,DLTS measurement,Al level

At present, study for the application of 4H-SiC bipolar device is performed positively. Although it is necessary to elucidate deep levels in 4H-SiC in order to understand motion properties of the device, there are few reports for Al level which is located in the dopant of p type 4H-SiC. In this study, we observed Al level in p type 4H-SiC by DLTS measurement and evaluated capture cross section of hole.