[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-2] 3D-integration of Si-based Peltier device onto 4H-SiC power device

〇Yutaka Furubayashi¹, Takafumi Tanehira², Kei Yonemori², Norihide Seo², Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ, 2.Mazda Motor Corp.)

Keywords:3D integration,Power devices,Peltier devices

Silicon has both of the high Seebeck coefficient and thermal conductivity, and therefore it is suitable for Peltier device in order to cool power devices. We tried to perform 3D integration of Si-based Peltier device onto 4H-SiC-based power device. Intrinsic SiC film on bulk 4H-SiC (0001) is used as a substrate. By utilize Si-based processes, we fabricated 3D integration of Si-based Peltier device and SiC-based Schottkey barrier diode (SBD) successfully. We confirmed that Si Peltier blocks surrounds circle-shaped SBD electrodes in the fabricated device.