2:45 PM - 3:00 PM
△ [15p-1A-6] Improvement in Contact Resistance of 4H-SiC by Excimer Laser Doping
Keywords:4H-SiC,laser,doping
Presentation information
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)
Tue. Sep 15, 2015 1:30 PM - 5:30 PM 1A (131+132)
座長:黒木 伸一郎(広島大),升本 恵子(産総研)