[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-8] [JSAP Paper Award Speech] Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence

〇Ryohei Tanuma¹, Masahiro Nagano¹, Isaho Kamata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

Keywords:JSAP Paper Award