[15p-2H-1~6] Recent Trend of Analysis Techniques for Functional Materials and Devices

[15p-2H-6] Site-Specific, High Spatial Resolution and High Sensitivity 2D Carrier Profiling of Si devices with Scanning Spreading Resistance Microscopy (SSRM)

〇Li Zhang¹ (1.Toshiba R&D Center)

Keywords:SSRM,carrier/dopant,2D profiling, mapping

Scanning spreading resistance microscopy (SSRM) performed in high vacuum is a typical technique for quantitative 2D-carrier/dopant profiling, with high spatial resolution and wide dynamic range of carrier concentration. So far, we have reported realization of high spatial resolution of 1 nm of SSRM with deduction of parasitic resistance by measuring in vacuum, and applications to source/drain engineering in Si devices. ITRS 2013 emphasized the effectiveness of SSRM in high vacuum for 2D carrier/dopant profiling. We also developed the site-specific SSRM (SS-SSRM) enabling analysis of specific locations and narrow devices. The SS-SSRM also became possible in manufacturing line and failure analysis of real products.
In this work, we will review applications of SSRM in Si devices, and demonstrate the direct observation of discrete dopant distribution and fluctuation of active boron (B) in scaled MOSFETs and in various B-doped epi-layers by SS-SSRM. The SS-SSRM is demonstrated to be capable of observing discrete dopants in Si. Applications to power devices with low doping concentration will also be introduced showing the high sensitivity of SSRM.