[15p-2W-1~23] 2.2 Detection systems

[15p-2W-6] Feasibility study of impact ionization imaging sensors using Silicon-On-Insulator technology.

〇RYUTARO HAMASAKI¹, RYUTARO NISHIMURA¹, YASUO ARAI², IKUO KURACHI², TOSHINOBU MIYOSHI², MIHO YAMADA², AKIHIRO KOYAMA³, KENJI SHIMAZOE³ (1.SOKENDAI, 2.KEK IPNS, 3.Tokyo Univ.)

Keywords:Silicon-On-Insulator technology

We are developing SOI_CMOS imaging device to detect low-level signals, amplification mechanism to increase signal-to-noise ratio is need such as avalanche process.In this presentation, we will show results of feasibility study of realizing the sensor through HyENEXSS TCAD simulation and also present recent measurement results using SOI test devices.