[15p-2W-1~23] 2.2 Detection systems

△ [15p-2W-9] Simulation of Gated Silicon Drift Detector Using Thick Si Wafer

〇(M2)Shohei Ishikawa¹, Shinya Hukushima¹, Shungo Sakurai¹, Yuya Oda¹, Akinobu Takeshita¹, Atsuki Hidaka¹, Hideharu Matsuura¹ (1.OECU)

Keywords:X-ray Detector,Silicon,Gated Silicon Drift Detector

We simulate the electric potential distribution in a GSDD with a Si substrate having thickness of 2.5 mm and resistivity of 10 kΩ·cm, and we optimize GSDD structure. In the simulated electric potential distribution, the electric field was strong enough that all electrons produced by X-ray photons flowed toward the anode.