Trench-channel vertical MOSFET using C-H diamond surface

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

Tue. Sep 15, 2015 1:15 PM - 8:00 PM 4F (438)

座長:小山和博(デンソー),齊藤丈靖(大阪府立大),嘉数誠(佐賀大)

2:45 PM - 3:00 PM

〇TOSHIKI SAITO¹, MIKINORI KOBAYASI¹, YUYA KITABAYASHI¹, DAISUKE MATSUMURA¹, MASAFUMI INABA¹, ATSUSHI HIRAIWA¹, HIROSHI KAWARADA¹ (1.Waseda Univ.)

Keywords:diamond,MOSFET,vertical structure