[15p-PB2-1~53] 8 Plasma Electronics（Poster)

[15p-PB2-45] Spatial structures of ring-shaped hollow cathode RF plasma with a single narrow trench for high-density plasma sources

〇Yasunori Ohtsu¹, Naoki Matsumoto¹, Yuto Morita¹, Julian Schulze², Edmund Schuengel² (1.Saga Univ., 2.West Virginia Univ.)

Keywords:capacitively coupled plasma,hollow cathode discharge,functional thin film

Functional thin film preparation for solar cell and large diameter display panels by plasma enhanced chemical vapor deposition and physical sputtering as well as microfabrication of large scale integrated circuits by dry etching have been widely performed by capacitively coupled plasma (CCP) sources. The CCP is a useful plasma source, because its experimental setup is very simple for the chamber maintenance and large-diameter substrate treatment is possible. However, CCPs suffer from low plasma densities compared to other plasma sources. This limits the system throughput. In this work, we propose structured powered electrodes with various shaped hollow cathodes as a method to solve this problem. Plasma density profiles of the ring-shaped hollow cathode RF plasma with a narrow hollow trench of 2 mm in width are presented and are described theoretically by a diffusion model.