[16a-1B-1~12] 21.1 Joint Session K

[16a-1B-5] Improving of Electrical Performance of SiO₂/ZnO Layered film by Thermal Annealing

〇Yasuji Yamada¹, Shuhei Funaki¹, Sota Inoue¹, Hiroki Kikuchi¹ (1.Shimane Univ.)

Keywords:transparent conducting oxide film,Ga-doped ZnO,annealing

SiO₂/GZO layered films, which were formed by a SiO₂ layer on a transparent conducting film of Ga-doped ZnO (GZO) both deposited by the sputtering method, were investigated in electrical and structural properties after thermal annealing. The layered films showed a temperature dependence of resistivity different from that of GZO films when annealing temperatures above 400ºC in vacuum. The details will be reported in terms of carrier density and crystalline structure and discussed from a viewpoint of atom diffusion.