[16a-1D-1~12] 15.4 III-V-group nitride crystals

[16a-1D-8] Evaluation of homogeneous and inhomogeneous linewidth broadening of single GaN interface-fluctuation quantum dots

〇Munetaka Arita¹, Satoshi Kako^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

Keywords:nitride semiconductors,quantum dots,single dot spectroscopy

The homogeneous and inhomogeneous exciton linewidth broadening of a single GaN/AlGaN interface-fluctuation quantum dot has been investigated quantitatively. Unlike the conventional GaN-based quantum dots, these quantum dots exhibit rather small inhomogeneous broadening thanks to the lower density of nearby point defects, enabling us to evaluate the homogeneous broadening.