The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 2R (231-2)

座長:末益 崇(筑波大)

11:30 AM - 11:45 AM

[16a-2R-10] Fabrication and electrical properties of mesa-structured Mg2Si pn-junction diode

〇tomohiro akiyama1, nobuhiko hori1, haruhiko udono1 (1.Ibaraki Univ.)

Keywords:photodiode,silicide,semiconductor