The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 2R (231-2)

座長:末益 崇(筑波大)

10:30 AM - 10:45 AM

[16a-2R-6] Development of Spectrally-Selective Infrared Emitters having High Selectivity with FeSi2/W Thin Film

〇Shoma Masunaka1, Kensuke Nishiura1, Kyoko Namura1, Motofumi Suzuki1 (1.Kyoto Univ.)

Keywords:FeSi2,infrared emitters,high spectral selectivity