InP-based Double Heterojunction Bipolar Transistors Fabricated on SiC wafer by Atomic Diffusion Bonding Method

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Wed. Mar 11, 2015 9:00 AM - 12:00 PM A21 (6A-213)

10:45 AM - 11:00 AM

〇Masataka Watanabe¹, Masaki Yanagisawa¹, Katsumi Uesaka¹, Mitsuru Ekawa¹, Hajime Shoji¹ (1.Sumitomo Electric Industries)

Keywords:InP-DHBT