[11a-A23-1~12] 13.5 デバイス／集積化技術

▲ [11a-A23-2] Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates

〇(D)Xiao YU^{1, 2}, Jian KANG^{1, 2}, Rui ZHANG^{1, 2}, Mitsuru TAKENAKA^{1, 2}, Shinichi TAKAGI^{1, 2} (1.Univ. of Tokyo, 2.JST-CREST)

キーワード：GeOI,mobility