The 62nd JSAP Spring Meeting, 2015

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13 Semiconductors » 13.5 Semiconductor devices and related techologies

[11a-A23-1~12] 13.5 Semiconductor devices and related techologies

Wed. Mar 11, 2015 9:00 AM - 12:15 PM A23 (6A-216)

11:15 AM - 11:30 AM

▼ [11a-A23-9] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs

〇Minsoo Kim1, 2, Yuki K. Wakabayashi1, Ryosho Nakane1, Masafumi Yokoyama1, 2, Mitsuru Takenaka1, 2, Shinichi Takagi1, 2 (1.The Univ. of Tokyo, 2.JST-CREST)

Keywords:Tunnel FET,Strained Si,Ge-source